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Distribution of chemical elements in the surface layer of the films implanted ions SI+ with yttrium iron garnet

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Product Description

We have presented an analysis surface implanted of ions Si+ with dose of 5•1013 sm–2 and the energies of 100—150 keV of iron-yttrium garnet films obtained using X-ray photoelectron spectroscopy, established the relative content of major chemical elements in the surface layer, obtained information about the features of electronic states atoms on the surface, the valence and structural changes occurring in the surface layer under implanted silicon with different energy.

Additional Information

Quality

excellent

Volume

12

1

Section

Ion Plasma Technologies and Equipment

Types of files

pdf

Year of publication

2014

Pages

39-44

Language

Ukrainian

Authors

Гарпуль О.З., Гасюк И.М., Коцюбинский В.О., Пылыпив В.М.

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