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The features of sputtering silicon and carbon targets with accelerated fullerene C60 ions

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Product Description

We studied patterns of film growth and surface erosion during irradiation of carbon and silicon beam of accelerated ions with energies of C60 in the range of 2,5–24 keV at a temperature of 373 K. targets established that the growth of carbon films on the surface of the irradiated silicon target is observed to energies 7 keV ions and at 19 to the surface of carbon keV. When the ion energy above the specified values on the surface of the film is not formed and there is erosion of the target material. The structure and mechanical properties of carbon films grown in the range of ion energies fullerene 2,5–11,5keV.

Additional Information

Quality

excellent

Volume

13

1

Section

Ion Plasma Technologies and Equipment

Types of files

pdf

Year of publication

2015

Pages

91-104

Language

Russian

Authors

А.С. Вус, Девизенко А.Ю., Дроздов А.Н., Зубарев Е.Н., Малеев М.В., Пуха В.Е.

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