Behaviors of film growth and surface during irradiation of the indium tin oxide targets (ITO, 90 % In2O3 + 10 % SnO2) by accelerated C60 ion beam were investigated. The ion beam energy was in the range of 2.5–20 keV and target (substrate) temperature TS was in the range of 373–673 K. The effects of the ion energy and temperature on the sputtering yield were assessed. It was found that surface etching occurred for ion energies above 3.75 keV and TS = 373 K. Growth of the carbon films on a surface of the ITO targets took place for ion energies below 3.75 keV. In the case of the ion energy of 5 keV, the target was sputtered when the temperature was below 423 K, and the growth of the carbon films was observed for higher temperatures. It was found that increasing the temperature reduced the sputtering yield.